SIRA88DP www.vishay.com vishay siliconix s16-2440-rev. a, 05-dec-16 1 document number: 77777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 30 v (d-s) mosfet features ? trenchfet ? gen iv power mosfet ? 100 % r g and uis tested ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 applications ?dc/dc conversion ? battery protection ? load switching ? dc/ac inverters notes a. based on t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak so-8 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufactu ring. a solder fillet at the exposed copper tip cannot be guara nteed and is not required to ensure adequate bo ttom side solder interconnection. e. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. f. maximum under steady stat e conditions is 70 c/w. product summary v ds (v) 30 r ds(on) max. ( ? ) at v gs = 10 v 0.0067 r ds(on) max. ( ? ) at v gs = 4.5 v 0.0100 q g typ. (nc) 8.3 i d (a) 45.5 configuration single powerpak ? s o-8 s ingle top view 1 6.15 mm 5.15 mm bottom view 4 g 3 s 2 s 1 s d 8 d 6 d 7 d 5 n-channel mosfet g d s ordering information package powerpak so-8 lead (pb)-free and halo gen-free SIRA88DP-t1-ge3 absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs +20, -16 continuous drain current (t j = 150 c) t c = 25 c i d 45.5 a t c = 70 c 36.4 t a = 25 c 16.5 b, c t a = 70 c 13.1 b, c pulsed drain current (t = 300 s) i dm 100 continuous source-drain diode current t c = 25 c i s 22.7 t a = 25 c 3 b, c single pulse avalanche current l = 0.1 mh i as 10 single pulse avalanche energy e as 5mj maximum power dissipation t c = 25 c p d 25 w t c = 70 c 16 t a = 25 c 3.3 b, c t a = 70 c 2.1 b ,c operating junction and storage temperature range t j , t stg -55 to +150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 10 s r thja 30 37 c/w maximum junction-to-case (drain) steady state r thjc 45
SIRA88DP www.vishay.com vishay siliconix s16-2440-rev. a, 05-dec-16 2 document number: 77777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. c. t c = 25 c; expected voltage stress during 100 % ui s test. production data log is not available. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 30 - - v drain-source breakdown voltage (transient) c v dst v gs = 0 v, i d(aval) = 10 a, t transcient ? 50 ns 36 - - v ds temperature coefficient ? v ds /t j i d = 250 a -15.5- mv/c v gs(th) temperature coefficient ? v gs(th) /t j --4.7- gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.1 - 2.4 v gate-source leakage i gss v ds = 0 v, v gs = +20, -16 v - - 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v - - 1 a v ds = 30 v, v gs = 0 v, t j = 55 c - - 10 on-state drain current a i d(on) v ds ? 5 v, v gs = 10 v 30 - - a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 10 a - 0.0054 0.0067 ? v gs = 4.5 v, i d = 8 a - 0.0078 0.0100 forward transconductance a g fs v ds = 10 v, i d = 10 a - 47 - s dynamic b, d input capacitance c iss v ds = 15 v, v gs = 0 v, f = 1 mhz - 985 - pf input capacitance c oss - 305 - output capacitance c rss -38- reverse transfer capacitance - 0.039 0.078 c rss /c iss ratio q g v ds = 15 v, v gs = 10 v, i d = 10 a - 16.8 25.5 nc total gate charge v ds = 15 v, v gs = 4.5 v, i d = 10 a - 8.3 12.5 q gs -2.1- gate-source charge q gd -2.8- gate-drain charge q oss v ds = 15 v, v gs = 0 v - 8.7 - output charge r g f = 1 mhz 1.5 3.3 6.5 ? gate resistance t d(on) v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 10 v, r g = 1 ? -816 ns turn-on delay time t r -2142 rise time t d(off) -1530 turn-off delay time t f -816 fall time t d(on) v dd = 15 v, r l = 1.5 ? i d ? 10 a, v gen = 4.5 v, r g = 1 ? -1224 turn-on delay time t r -3060 rise time t d(off) -1938 turn-off delay time t f -1020 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - - 22.7 a pulse diode forward current a i sm --100 body diode voltage v sd i s = 5 a - 0.77 1.1 v body diode reverse recovery time t rr i f = 10 a, di/dt = 100 a/s, t j = 25 c -4896ns body diode reverse recovery charge q rr - 72 140 nc reverse recovery fall time t a -40- ns reverse recovery rise time t b -8-
SIRA88DP www.vishay.com vishay siliconix s16-2440-rev. a, 05-dec-16 3 document number: 77777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current gate char g e transfer characteristics capacitance on-resistance vs. junction temperature 10 100 1000 10000 0 20 40 60 80 100 00.511.522.5 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 10 v thru 5 v v gs = 4 v v gs = 3 v v gs = 2 v 10 100 1000 10000 0 0.004 0.008 0.012 0.016 0.020 020406080100 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 4.5 v v gs = 10 v 10 100 1000 10000 0 2 4 6 8 10 0 4 8 12 16 20 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line v ds = 10 v, 15 v, 20 v i d = 10 a 10 100 1000 10000 0 16 32 48 64 80 012345 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 260 520 780 1040 1300 0 5 10 15 20 25 30 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss 10 100 1000 10000 0.7 0.9 1.1 1.3 1.5 1.7 -50-25 0 255075100125150 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line i d = 10 a v gs = 10 v v gs = 4.5 v
SIRA88DP www.vishay.com vishay siliconix s16-2440-rev. a, 05-dec-16 4 document number: 77777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) source-drain diode forward volta g e threshold volta g e on-resistance vs. gate-to-source volta g e sin g le pulse power, junction-to-ambient safe operatin g area 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 -1.0 -0.7 -0.4 -0.1 0.2 0.5 -50 -25 0 25 50 75 100 125 150 axis title 1st line 2nd line 2nd line v gs(th) - variance (v) t j - temperature (c) 2nd line i d = 5 ma i d = 250 a 10 100 1000 10000 0.000 0.006 0.012 0.018 0.024 0.030 0246810 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 125 c 10 100 1000 10000 0 40 80 120 160 200 0.001 0.01 0.1 1 10 axis title 1st line 2nd line 2nd line power (w) time (s) 2nd line 10 100 1000 10000 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) (1) v gs > minimum v gs at which r ds(on) is specified i dm limited limited by r ds(on) (1) t a = 25 c single pulse bvdss limited 100 ms 10 ms 1 ms 100 s dc 10 s 1 s i d limited
SIRA88DP www.vishay.com vishay siliconix s16-2440-rev. a, 05-dec-16 5 document number: 77777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) current deratin g a power, junction-to-case power, junction-to-ambient note a. the power dissipation p d is based on t j max. = 150 c, using junction-to- case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the cu rrent rating, when this rating falls below the package limit. 10 100 1000 10000 0 10 20 30 40 50 0255075100125150 axis title 1st line 2nd line 2nd line i d - drain current (a) t c - case temperature (c) 2nd line 10 100 1000 10000 0 6 12 18 24 30 0255075100125150 axis title 1st line 2nd line 2nd line power (w) t c - case temperature (c) 2nd line 10 100 1000 10000 0 0.5 1.0 1.5 2.0 2.5 0255075100125150 axis title 1st line 2nd line 2nd line power (w) t a - ambient temperature (c) 2nd line
SIRA88DP www.vishay.com vishay siliconix s16-2440-rev. a, 05-dec-16 6 document number: 77777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77777 . 10 100 1000 10000 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2 p dm t 1 t 2 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm -t a = p dm z thja (t) 4. surface mounted t 1 t 2 notes: 10 100 1000 10000 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
|
